Optical characterization of MBE-Grown ZnO epilayers
Journal
Advanced Materials Research
Journal Volume
222
Pages
86-89
Date Issued
2011
Author(s)
Karaliunas, M.
Serevicius, T.
Kuokstis, E.
Jursenas, S.
Ting, S.Y.
Huang, J.J.
Abstract
Optical characterization of molecular-beam-epitaxy-grown ZnO and MgZnO epitaxial layers on sapphire (0001) substrates is presented. The parameters such as carrier recombination time and optical gain coefficient are analyzed. Radiative recombination mechanisms of ZnO in dense quasiparticle system are discussed. The ZnO epilayers even with lower structural quality are tolerable for applications in optoelectronics as light emitters.
Type
book