Large-scale thallene film with emergent spin-polarized states mediated by tin intercalation for spintronics applications
Journal
Materials Today Advances
Journal Volume
18
ISSN
25900498
Date Issued
2023
Author(s)
Mihalyuk, Alexey N.
Bondarenko, Leonid V.
Tupchaya, Alexandra Y.
Vekovshinin, Yuriy E.
Utas, Tatyana V.
Gruznev, Dimitry V.
Eremeev, Sergey V.
Zotov, Andrey V.
Saranin, Alexander A.
Abstract
The quantum effects confined in the ultimate two-dimensional limit are able to address the challenges and provide advances in high-performance spintronic devices. In the paper we show a successful strategy to enrich the electronic properties of thallene, a new honeycomb analogue of graphene, through the interface engineering, which opens a great potential of thallene as an advanced spintronics material. While the thallene has been experimentally realized recently on NiSi2/Si(111) substrate, there remains a lack of attractive electronic properties due to the strong thallene-substrate coupling. This challenge is addressed here through the decoration of thallene/NiSi2 interface by Sn interlayer, which allows to eliminate the thallene-substrate coupling and produce a high-quality large-scale thallene monolayer with exotic electron bands demonstrating colossal spin-polarization just above the Fermi level. It is demonstrated that appropriate electron doping or external electric field are enable the spin-transport regime. The discovered band structure regulation boosts the functionality of the 2D-Tl Xene and makes it a highly attractive material for spintronics applications. © 2023 The Authors
Subjects
2D materials
Silicon
Spin-orbit coupling
Spintronics
Xenes
Publisher
Elsevier Ltd
Description
Article number 100372
Type
journal article