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College of Science / 理學院
Applied Physics / 應用物理研究所
Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
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Effective passivation of In0. 2Ga0. 8As by HfO2 surpassing Al2O3 via in-situ atomic layer deposition
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
17
Pages
172104
Date Issued
2012
Author(s)
Chang, YH
Lin, CA
Liu, YT
Chiang, TH
Lin, HY
Huang, ML
Lin, TD
Pi, TW
Kwo, J
MINGHWEI HONG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/371830
Type
journal article