Nanostructures and carrier localization behaviors of green-luminescence InGaN/GaN quantum-well structures of various silicon-doping conditions
Journal
Applied Physics Letters
Journal Volume
84
Journal Issue
14
Pages
2506-2508
Date Issued
2004
Author(s)
Cheng, Y.-C.
Lin, E.-C.
Wu, C.-M.
Rosenauer, A.
Ma, K.-J.
Shi, S.-C.
Pan, C.-C.
Lin, En-Chiang
Wu, Cheng-Ming
Yang, C. C.
Rosenauer,
reas
Ma, Kung-Jen
Shi, Shih-Chen
LI-CHYONG CHEN
Pan, Chang-Chi
Chyi, Jen-Inn
Abstract
The carrier localization and nanostructures behaviors of green-luminescence GaN/InGaN quantum-well (QW) structures of various silicon-doping conditions are discussed. The results of photoluminescence (PL), strain state analysis (SSA), detection-energy-dependent photoluminescence excitation (DEDPLE) and excitation-energy-dependent photoluminescence (EEDPL) of three InGaN/GaN QW samples are compared. The SSA images show weaker composition fluctuations in the undoped and well-doped samples and strongly clustering nanostructures in the barrier-doped sample. As a result of the differences in carrier localization, differences in silicon doping between the samples give rise to the differences in EEDPL and DEDPLE spectra.
Other Subjects
Agglomeration; Composition; Doping (additives); Functions; Gallium nitride; Interfaces (materials); Metallorganic chemical vapor deposition; Microstructure; Nanostructured materials; Photoluminescence; Photons; Sampling; Semiconducting indium compounds; Silicon; Carrier localization; Stark effect; Strain state analysis; Undoped structure; Semiconductor quantum wells
Type
journal article