The effect of germanium fraction on high-field band-to-band tunneling in p+-SiGe/n+-SiGe junctions in forward and reverse biases
Journal
IEEE Transactions on Electron Devices
Journal Volume
60
Journal Issue
8
Pages
2479-2484
Date Issued
2013
Author(s)
Abstract
The dependence of band-to-band tunneling in homojunctions on Ge fraction and electric field is investigated in the range . Negative differential resistance (NDR) in forward bias is observed for each device with the highest peak tunneling-current density of 8.2 without any postannealing step. Reverse-biased band-to-band tunneling, as relevant for tunneling field-effect transistors, is also measured. Tunneling via junction defects can mask band-to-band tunneling and the observation of NDR at forward bias confirms negligible tunneling via those defects. Both forward-biased and reverse-biased data are compared with models versus electric field and Ge fraction.
Type
journal article