IONEnhancement of Ge0.98Si0.02Nanowire nFETs by High-κ Dielectrics
Journal
IEEE Electron Device Letters
Journal Volume
43
Journal Issue
10
Pages
1601
Date Issued
2022-10-01
Author(s)
Abstract
The HfxZryO2 with high Zr content is demonstrated to form the anti-ferroelectric tetragonal phase (AFE t-phase). The peak dielectric constant (47) of Hf0.2Zr0.8O2 is achieved. By taking advantage of the high dielectric constant, the Hf0.2Zr0.8O2 is used in the gate stack on the high mobility Ge0.98Si0.02 channel to significantly enhance the drive current. Stacked two Ge0.98Si0.02 gate-all-around nanowires can have high ION per perimeter of 740∼\μ Aμ m at VOV= VDS= 0.5V. The thermal budget is as low as 450 °C.
Subjects
Anti-ferroelectric (AFE) | GeSi | high-ΰ | nanowires (NWs)
Publisher
IEEE-INST ELECTRICAL ELECTRONICS ENGINEERS INC
Type
journal article