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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO 2
Details
Two states phenomenon in the current behavior of metal-oxide-semiconductor capacitor structure with ultra-thin SiO 2
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
7
Date Issued
2012
Author(s)
JENN-GWO HWU
DOI
10.1063/1.4746284
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84865425160&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/370332
Type
journal article