Growth mechanism of GaN growing on dome-shaped patterned-sapphire substrates
Journal
ACM International Conference Proceeding Series
Pages
80-83
Date Issued
2019
Author(s)
Chien, C.Y.
Yi, C.K.
Pai, C.W.
Huang, C.C.
CHIEH-HSIUNG KUAN
Abstract
An efficient method to modify the defect density of a gallium nitride (GaN) epi-wafer is proposed in this study. A patterned sapphire substrate (PSS) was used here acting as the medium for defect adjustment. The characteristics of yielded samples were analyzed by Raman scattering and etching pitch density (EPD) methods, which did show the improved crystal quality of GaN. In order to reveal the veiled mechanism of defect reduction, we had executed Raman scattering and X-ray diffraction (XRD) measurements on various samples with different growth time to verify the behavior of defects during epitaxy.
Type
conference paper