Characterization and modeling of 100 nm RF generic CMOS and 500 nm RF power CMOS
Journal
International Symposium on VLSI Technology, Systems, and Applications, Proceedings
Journal Volume
2003-January
Pages
105-108
Date Issued
2003
Author(s)
Abstract
In this paper, we propose a new wide-band RF-CMOS model, which includes a complete silicon substrate network. A method to extract every parameter of this model is also developed. Excellent agreement between measurement and simulation up to 40 GHz is achieved for 100 nm and 500 nm CMOS devices under study. In addition, the kink phenomenon (anomalous dip) of scattering parameters S/sub 11/ and S/sub 22/ that usually appears in leading-edge RF CMOS devices with sub-130 nm gate-length or RF power CMOS devices is quantitatively analyzed for the first time.
Type
conference paper