High Performance MoS2 TFT using Graphene Contact First Process
Journal
AIP Advance
Journal Volume
7
Journal Issue
8
Pages
1579-1598
Date Issued
2017
Author(s)
Abstract
An ohmic contact of graphene/MoS2 heterostructure is determined by using ultraviolet photoelectron spectroscopy (UPS). Since graphene shows a great potential to replace metal contact, a direct comparison of Cr/Au contact and graphene contact on the MoS2 thin film transistor (TFT) is made. Different from metal contacts, the work function of graphene can be modulated. As a result, the subthreshold swing can be improved. And when Vg
SDGs
Other Subjects
Field effect transistors; Graphene; Ohmic contacts; Processing; Thin film transistors; Ultraviolet photoelectron spectroscopy; Graphene contacts; High mobility; High processing temperatures; Metal contacts; Off current; ON/OFF current ratio; P-type; Subthreshold swing; Graphene transistors
Type
journal article