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College of Engineering / 工學院
Engineering Science and Ocean Engineering / 工程科學及海洋工程學系
Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers
Details
Growth and characterization of nitrogen-doped C-face 4H-SiC epilayers
Journal
Journal of Crystal Growth
Journal Volume
297
Journal Issue
2
Pages
265-271
Date Issued
2006
Author(s)
Chen, W.
Lee, K.-y.
Capano, M.A.
KUNG-YEN LEE
DOI
10.1016/j.jcrysgro.2006.09.033
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-33845575886&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/320905
Type
journal article