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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device
Details
Floating-Body-Effect-Related Gate Tunneling Leakage Current Phenomenon of 40nm PD SOI NMOS Device
Journal
International Semiconductor Devices Research Symposium
Date Issued
2009-12
Author(s)
H. J. Hung
J. B. Kuo
C. T. Tsai
D. Chen
JAMES-B KUO
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/351960
Type
conference paper