Multicolor ITO/SiOx/p-Si/Al light emitting diodes with improved emission efficiency by small Si quantum dots
Journal
IEEE Journal of Quantum Electronics
Journal Volume
47
Journal Issue
5
Pages
698-704
Date Issued
2011
Author(s)
Abstract
In this paper, multicolor ITO/SiO x /p-Si/Al light emitting diodes (LEDs) made by Si quantum dot (Si-QD) embedded Si-rich SiO x grown by detuning the radio frequency (RF) plasma power under the plasma-enhanced chemical vapor deposition system are presented. With the Si-QD size shrinkage obtained by increasing the RF plasma powers from 30 to 70 W, the turn-on voltage of red, green, and blue ITO/SiO x /p-Si/Al LEDs is found to increase from 70 to 99 V, with the maximum electroluminescent power increasing from 9 to 423 nW.
SDGs
Type
journal article