Electronic structures of Ga 2 O 3 (Gd 2 O 3 ) gate dielectric on n-Ge(001) as grown and after CF 4 plasma treatment: A synchrotron-radiation photoemission study

Journal

Journal of Applied Physics

Journal Volume

109

Journal Issue

6

Date Issued

2011

Author(s)

Pi, T.-W.

Lee, W.C.

Huang, M.L.

Chu, L.K.

Lin, T.D.

Chiang, T.H.

Wang, Y.C.

Wu, Y.D.

Kwo, J.

DOI

10.1063/1.3553442

URI

https://scholars.lib.ntu.edu.tw/handle/123456789/443371

URL

https://www.scopus.com/inward/record.uri?eid=2-s2.0-79953646212&doi=10.1063%2f1.3553442&partnerID=40&md5=9dc59071f18a2d54401b418d7f7610e9

Type

journal article