Low-temperature epitaxial growth of vertical in2O3 nanowires on a-plane sapphire with hexagonal cross-section
Journal
Advanced Materials
Journal Volume
19
Journal Issue
19
Pages
3012-3015
Date Issued
2007
Author(s)
Abstract
Epitaxial growth of vertical In2O3 (111) nanowires with hexagonal cross-section on a-plane sapphire is reported. The figure showing the vertical wires is viewed at 45° from the substrate normal. These wires taper gradually towards the tops and they start to bend near the tips. Because of the low-temperature growth, the wires possess a new hexagonal symmetry and a shortest photoluminescence wavelength among those that have been reported for In2O3 nanowires.
Type
journal article