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College of Electrical Engineering and Computer Science / 電機資訊學院
Photonics and Optoelectronics / 光電工程學研究所
Suppression of surface leakage in GaN MOS device by crystalline Ga2O3 layer MOS
Details
Suppression of surface leakage in GaN MOS device by crystalline Ga2O3 layer MOS
Journal
6th International Conference on Nitride Semiconductors
Date Issued
2005-01
Author(s)
H.-M. Wu
C.-Y. Lu
L.-H. Peng
LUNG-HAN PENG
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/317935
Description
Bremen, Germany
Type
conference paper
