Low-leakage in0.53Ga0.47As p-i-n photodetector fabricated on GaAs substrate with linearly graded metamorphic in xGa1-xP buffer
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
5624
Pages
399-406
Date Issued
2005
Author(s)
Abstract
A novel top-illuminated metamorphic In0.53Ga0.47As p-i-n photodiodes (MM-PINPD) grown on GaAs substrate by using a linearly graded InxGa1-xP (x graded from 0.51 to 1) buffer layer is reported. The dark current, optical responsivities, noise equivalent power (NEP), and operational bandwidth of the MM-PINPD with aperture diameter of 60 μm are 13 pA, 0.77/0.59 (1310/1550 nm) A/W, 6.9x10-11 W/Hz1/2, and 7.5 GHz, respectively. The performances of the MM-PINPD on GaAs are demonstrated to be better than those of a similar device made on InGaAs/InP substrate.
Type
conference paper