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College of Science / 理學院
Applied Physics / 應用物理研究所
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
Details
In situ fabricated Ga2O3-GaAs structures with low interface recombination velocity
Journal
Applied Physics Letters
Journal Volume
66
Journal Issue
5
Pages
625-627
Date Issued
1995
Author(s)
Passlack, M
MINGHWEI HONG
Schubert, EF
Kwo, JR
Mannaerts, JP
Chu, SNG
Moriya, N
Thiel, FA
URI
http://scholars.lib.ntu.edu.tw/handle/123456789/315716
Type
journal article
