Mechanical strain effect of n-channel polycrystalline silicon thin-film transistors
Journal
Applied Physics Letters
Journal Volume
89
Journal Issue
10
Date Issued
2006
Author(s)
Abstract
The current change of n-channel polycrystalline silicon thin-film transistors is analyzed experimentally and theoretically under different strain conditions. Under the uniaxial strain parallel to the channel, the +6.7% and +5.3% drain current enhancements are achieved in linear and saturation regions, respectively. There are -4.4% (linear) and -4.6% (saturation) drain current degradations when the uniaxial strain is applied perpendicular to the channel. The polycrystalline silicon is mainly composed of (111)-oriented grains, measured by electron diffraction pattern. Phonon-limited mobility is theoretically calculated. There is a qualitative agreement between experiments and theoretical analysis. © 2006 American Institute of Physics.
SDGs
Other Subjects
Electric currents; Photons; Polycrystalline materials; Semiconducting silicon compounds; Strain; Drain current; Mechanical strain; Polycrystalline silicon thin-film transistors; Uniaxial strain; Thin film transistors
Type
journal article