BEOL Design and RF Performance of Stacked Si Nanosheets and Nanowires
Journal
2023 International VLSI Symposium on Technology, Systems and Applications, VLSI-TSA/VLSI-DAT 2023 - Proceedings
ISBN
9798350334166
Date Issued
2023-01-01
Author(s)
Abstract
RF performance of stacked nanosheet (NS) and stacked nanowire (NW) nFETs is studied and optimized by validated TCAD simulation considering the double-sided (DS) gate contact and contact over active-gate (COAG) transistor array layouts. The back-end-of-line (BEOL) up to M3 level is included. As compared to stacked NSs, stacked NWs have smaller effective width (Weff) and smaller channel cross section, leading to smaller intrinsic capacitance (Cox) and smaller output conductance (gd) under similar transconductance (gm) and similar parasitic capacitance (Cpar). Thus, better RF performance of stacked NWs can be achieved. In this work, the vertically stacked channel numbers (floor#) of stacked NSs/NWs are optimized under different lateral-stack numbers of transistor arrays considering DS gate contact and COAG layouts.
Type
conference paper