Ultrafast inter-subband hole relaxation in an InGaN multiple-quantum-well laser-diodeantum-well (MQW) laser diode
Journal
Optics InfoBase Conference Papers
ISBN
9781557528209
Date Issued
2003-01-01
Author(s)
Abstract
The femtosecond carrier dynamics in InGaN MQW laser diodes were investigated using a time-resolved bias-lead monitoring technique. Ultrafast inter-subband hole relaxation processes were found to dominated the observed carrier dynamics.
Type
conference paper