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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure
Details
Investigation of carbon interstitials with varied SiO2 thickness in HfO2/SiO2/4H-SiC structure
Journal
Applied Physics Letters
Journal Volume
101
Journal Issue
25
Date Issued
2012
Author(s)
JENN-GWO HWU
DOI
10.1063/1.4772986
URI
http://www.scopus.com/inward/record.url?eid=2-s2.0-84871792674&partnerID=MN8TOARS
http://scholars.lib.ntu.edu.tw/handle/123456789/370337
Type
journal article