Femtosecond carrier dynamics in GaN
Journal
Proceedings of SPIE - The International Society for Optical Engineering
Journal Volume
4280
Pages
1-8
Date Issued
2001
Author(s)
Abstract
Ultrafast carrier dynamics in an unintentionally doped GaN sample was investigated using femtosecond transient transmission measurements. Special attention was focused on bandtail states. The transient responses suggest that the shallow bandtail states are extended states and deep bandtail states are localized states. The carriers in shallow bandtail states are found to externally thermalize within 500 fs, at the same rate as the above bandgap carriers. The carriers in deep bandtail states are, on the other hand, dominated by carrier transfer into the lower energy states through phonon assisted tunneling.
SDGs
Type
conference paper