Quality Improvement of MOS Capacitors with Oxides Growth in Dry O2 by External Tensile-Temperature Stress Treatment
Date Issued
2006
Date
2006
Author(s)
Kung, Chien
DOI
en-US
Abstract
The metal-oxide-semiconductor (MOS) structure is the basis work for the complementary metal-oxide-semiconductor (CMOS) technology. Silicon oxide has been used as a gate dielectric of MOSFETs for more than forty years since MOSFET had been introduced due to its excellent stability, uniformity, and easy fabrication process. As above descriptions, in order to understand the effect of MOS capacitor, two issues should be considered. One is the thermal effect on device performance and the other is the influence of wafer sawing.
In the thesis, the effects of mechanical stress on silicon oxidation were studied only. The relation of thermal stress and the electrical characteristics of MOS capacitor are investigated. This study is a pioneering work on the subject since mechanical stress problems are considered to be one of the most important issues in the next generation of integrated circuit technology. Our works have demonstrated the substantial effects of tensile-temperature stress caused by the external adapted on the electrical characteristics of oxides.
In chapter 2, we investigated the thermal effect for MOS capacitors after receiving thermal treatment at 100℃ for 10minutes with external mechanical stresses applied on the substrate. And the measurement of interface traps density and current variation were made to compare the electrical characteristics of MOS capacitors. The experimental result shows tensile-temperature stress exhibits the best properties of interface traps density and I-V curve.
In chapter 3, the TZDB reliability was studied. We have demonstrated that the external tensile-temperature stress can result in TDZB reliability improvement. After two times of tensile-temperature stress performed, we found the result of TZDB reliability has a little different. As above description, we wonder that the effect of tensile-temperature stress is temporary for the TZDB reliability improvement, but not permanent
Subjects
金氧半元件
MOS Capacitor
Tensile
Type
thesis
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