Study of Si-based Metal-Oxide-Semiconductor Light Emitting diodes
Date Issued
2006
Date
2006
Author(s)
Lin, Kung-An
DOI
zh-TW
Abstract
Using silicon as the light emitting material, it can be easily integrated with the ultra large-scale integrated (ULSI) circuit .As the dimension of devices in the silicon ULSI is scaled down, it also brings up the problem of the time delay among components. Therefore, silicon light emitting sources provide an effective solution for data transmission. This thesis is devoted to the study of metal-oxide-silicon light emitting diodes (LEDs). First of all, SiO2 nano-particles as the oxide layer are spun upon the silicon substrate. The roughness between silicon and oxide layer results in nano-scale carrier confinement. Because of nano-scale carrier confinement, light efficiency is raised. It is a simple fabrication method. The components have good light emission efficiency. Then, comparison of the difference between FZ wafers and CZ wafers gives us the new point that CZ wafers can also be a material for light emitting component. Although FZ wafers have high quality, they still cost higher in price than CZ wafers. Because the quality of CZ wafers is improved in the past years, there is a tendency of replacing FZ wafers with CZ as a light emitting component. In the experiments, we observe optical power saturation phenomenon in high injection currents. In order to understand the reason why the phenomenon happens, we use a theoretical model to simulate and analyze the measurements. According to the theoretical investigation, the cause of the phenomenon is that lattice temperature is raised as the injection current increases. Because near lasing actions from Si-based light sources were observed in 2000 and 2004, we tried to fabricate Farby-Perot cavities for Si lasers similar to III-V-based laser diodes in our Lab .The fabrication conditions are experimentally studied. The difficulty in the cavity fabrication is addressed. Finally some possible improvements are proposed in the hope that Si-lasers can be realized and lead to a great impact on the industry of USLI in the future.
Subjects
矽
矽發光二極體
金氧半
費比-白洛腔
Silicon
Silicon LEDs
Metal-Oxide-Semiconductor
Farby-Perot cavities
Type
thesis
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