DC and RF Characterization of Tunnel Junction Light-Emitting Transistors
Date Issued
2014
Date
2014
Author(s)
Wu, Cheng-Han
Abstract
This thesis presents the fabrication and characterization of tunnel junction light-emitting transistors (TJLET) with 2.5 % and 5 % indium mole fraction at the AlGaAs/InxGa(1-x)As base-collector tunnel junctions. The collector tunnel junction is an additional source of holes resupply to the base, and to recombination, providing the higher optical output and optical modulation bandwidth. The experimental data can be explained by calculating the tunneling probability. In addition, high p+ and n+ tunnel junction doping can be more effectively controlled by the change of voltage via direct tunneling and Franz-Keldysh photon-assisted tunneling, which makes possible a direct scheme of voltage modulation in addition to the usual current modulation. This is an advantage for signal processing. A resonant optical modulation bandwidth up to 12 GHz is obtained via direct voltage modulation when the TJLET is operated in negative differential resistance region. An analytical understanding of these physical characteristics is developed based on experimental data and small-signal equivalent circuit model of TJLET. From the parasitic element extraction, we find out the base-collector resistance is the key component in the operation of TJLET.
Moreover, the first InAs/GaAs quantum dot light-emitting transistor (QDLET) is fabricated. The δ-function-like density of state and strong localization of electronic wave function make the QDs attractive for many device applications. In this work, the electrical and optical characteristics of QDLET are demonstrated. The emission wavelength is near ~ 1100 nm and suitable for optical communication.
Subjects
穿隧接面
發光電晶體
Type
thesis
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