Metal-Oxide-Semiconductor Structure with Embedded Ge Nanocrystals for Light Emission
Date Issued
2007
Date
2007
Author(s)
Sun, Wei-Lun
DOI
zh-TW
Abstract
矽鍺光電元件具有與矽積體化電路整合的優點，這是因為矽鍺光電元件具有1.3至1.55 um 的波長，它可以提升光纖通訊應用的重要性。隨著各種元件的製程已經相當成熟，如在矽鍺發光元件、調變器和光偵測器等元件製程，這些都將有助於矽光電元件和光電積體電路的研究與發展。
本研究中吾人利用電激發光的量測方法，來量測元件的發光頻譜以及強度，然後藉由L-I曲線來計算元件的外部量子效率，藉此來比較元件的發光效率。吾人利用三種不同的製程參數，包含了控制氧化層的厚度、金屬沉積後退火的時間、以及濺鍍鍺的厚度，來找出不同參數對元件發光特性的最佳參數。然後再從不同製程參數來討論對元件發光的物理機制，提出合理的解釋及想法。
The advantage of the optoelectronic component of silicon germanium is fully compatible with the Si-based microelectronic chips. Because SiGe-based optoelectronic devices can be tailored from 1.3 to 1.55 um, it increases the importance of this material system to fiber communication applications. With the ripe process technology of the several key devices like SiGe-based light emitters, photodetectors, modulators, and waveguides, it also opens the door for Si-based optical and electronic integrated circuits (OEICs).
In this study, we use electro-luminescence measurement(EL) to measure light spectrum and light intensity. And use L-I curve to measure external quantum efficiency to compare light efficiency from device. I use three different fabrication parameters, including the thickness of control oxide, the time of PMA(Post-metallization-anneal), different thickness of sputtered Ge to find the optimum parameters for light emission. Then we propose a model to explain the physical mechanisms in the device.
Subjects
矽鍺元件
鍺量子點
光電積體電路
金屬沈積熱退火
電激發光
SiGe device
Ge quantum dot
OEIC
PMA
EL
Type
thesis
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