Nanostructural analysis of a GaN-based violet laser diode
Journal
Surface Review and Letters
Journal Volume
15
Journal Issue
1-2
Pages
189-193
Date Issued
2008
Author(s)
Abstract
The nanostructure of p-type AlGaN / GaN strained-layer superlattice (SLS) cladding in a GaN -based violet laser diode (LD) has been investigated by high-angle annular dark-field (HAADF) scanning-transmission electron microscopy (STEM). The pairs of the AlGaN and GaN layers in SLS cladding are observed, where the AlGaN and GaN layers appear as dark and bright bands. It is also found that the threading dislocations disappeared within the SLS; this evidence manifests the role of SLS in suppressing threading dislocation propagation.
Type
journal article