The influence of pulsed laser deposited bismuth thin films properties upon annealing
Date Issued
2006
Date
2006
Author(s)
Huang, Jy-Jye
DOI
zh-TW
Abstract
Bi thin films were grown onto Eagle 2000 Glass by pulsed laser deposition (PLD). The laser source was Diode Pumped Solid-State Laser (DPSS) which wavelength was 355 nm. We tried different conditions to fabricate our Bi thin films. Later we chose Bi thin films grown at room temperature and ultra vacuum(10-8torr) to anneal in the chamber. The annealing temperature and time were 267°C and 8 hours. The properties of Bi thin films with annealing or not were investigated to find the influence of the annealing process.
Crystal structure and orientation were observed by X-ray diffraction (XRD), microstructure and the scale of the grain size were observed by scanning electron microscopy (SEM), and the magnetoresistance 、 carrier concentration and mobility at different temperature (7K and 300K) were observed by van der Pauw four points method.
Subjects
鉍
脈衝雷射蒸鍍
回火
磁阻
bismuth
pld
anneal
magnetoresistance
Type
thesis