Analysis of Nonuniformity Characterization for MOS Structure Device with High-k HfO2 Dielectric Laye
Date Issued
2009
Date
2009
Author(s)
Lu, Hui-Ting
Abstract
The EOTs are always derived from two frequency method of capacitance measurement with four parameters. However, the EOT is just the effective value excluding any message about nonuniformity characterization of devices. In this work, the characteristic of nonuniformity was extracted by the analysis of CV curve in deep depletion region. While examining the curve transformed from C-V curve, we would find the slope deviates from the theoretical value. By modifying the transforming equations with the nonuniformity model and the injection of proper uniformity factor, the C-V curve in deep depletion would be fitted well. As a result, the uniformity factor for every definite device would be found out, and we would take advantage of the factor to analyze the nonuniformity characteristic. In addition, the uniformity parameter which could index the degree of nonuniformity was also defined.s to the I-V curves, the conditions of breakdown and various device areas were all examined to observe the mechanism differences between SiO2 and HfO2 with and without initial SiO2 dielectric layer MOS capacitors. As a result, even the high-k material would have better ability to restrain leakage current than conventional dielectric material, SiO2, the HfO2 dielectric layer is more sensitive to experimental conditions than that of SiO2 evidently. And the importance of the initial SiO2 between the substrate and HfO2 layer is also obvious. As a conclusion, there is till a lot of space to find and develop the ways to take good advantage of high-k material as dielectric layer.
Subjects
Nonuniformity
high-k
MOS capacitor
deep depletion
HfO2
Type
thesis
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