First Demonstration of 2-floor GAA In<sub>2</sub>O<sub>3</sub> Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivation

First Demonstration of 2-floor GAA In₂O₃ Nanosheet FET Enabled by TiN Sacrificial Layers and Fluorine Passivation

Journal

2025 Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)

Start Page

1-3

Date Issued

2025-06-08

Author(s)

Wu, Yu-Shan

Liu, Yuan-Ming

Sung, Hsien-Ming

Ma, Rong-Wei

Gracia, Johannes

Fujiwara, Hidenari

Lu, Kuan-Wei

DOI

URI

SDGs

[SDGs]SDG2

Publisher

IEEE

Type

conference paper