High-performance ZnO thin-film transistors fabricated at low temperature on glass substrates
Resource
Electronics Letters
Date Issued
2006-07
Date
2006-07
Author(s)
DOI
0013-5194
Abstract
A high-performance enhancement-mode ZnO thin-film transistor (TFT) on a glass substrate is demonstrated. The ZnO thin film is deposited by RF magnetron sputtering with the presence of O2 at low deposition rate and low temperature. The IDS is as high as 1mA when biased at the saturation region VDS=10-20V and VGS=5V without any post-thermal anneal. The Ion/Ioff ratio is 3×106. The results are among the best ZnO TFTs ever obtained.
SDGs
Type
journal article
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