On the form of 1-D nonlinear Poisson’s equation and the concept of neutralization voltage for non-uniformly doped MOSFETs
Journal
Journal of Computational Electronics
Journal Volume
17
Journal Issue
1
Pages
211-216
Date Issued
2018
Author(s)
Abstract
Various types of doped 1-D nonlinear Poisson’s equations existing in conventional and junctionless multi-gate MOSFET modeling literature are extensively examined. It is found that their reference levels used to define the potential in Poisson’s equation are different, and some of them are not compatible with the potential definition in the commonly used formula of oxide-interface boundary condition. Those correct equations are identified by showing their compatibility with the oxide-interface boundary condition and verified by TCAD simulations. Moreover, the necessity to introduce the concept of neutralization voltage to replace the flat-band voltage for non-uniformly doped MOSFETs is discussed. ? 2017, Springer Science+Business Media, LLC, part of Springer Nature.
Subjects
Boundary conditions; Nonlinear equations; Poisson equation; Electrostatic potentials; Flat-band voltage; MOSFET modeling; MOSFETs; Oxide interfaces; Reference levels; TCAD simulation; MOSFET devices
Type
journal article