Recent progress of crystal growth modeling and growth control
Resource
Chemical Engineering Science 59(2004), 1437-1457
Journal
Chemical Engineering Science 59(2004)
Pages
1437-1457
Date Issued
2004
Date
2004
Author(s)
DOI
246246/2006111501233008
Abstract
With the rapid growth of electronic and optoelectronic industry, the demand for crystal materials increased dramatically for the past two
decades. The requirement for better, cheaper, and larger single crystals has driven extensive research and development in crystal growth.
To understand the interplay of associated transport processes and phase transformation, as well as to provide a design basis, crystal growth
modeling is becoming more important in both fundamentals and practice. In this article, we review some recent progress of numerical
modeling in crystal growth through three subjects: (1) hot-zone design, (2) active growth control, and (3) morphological simulation.
Examples are given through our research results in recent years. For better illustration and process understanding some visualization
results using transparent materials are given. The needs and the challenges ahead for crystal growth modeling are also discussed.
Subjects
Modeling
Crystal growth
Czochralski
Bridgman
Thermal convection
Magnetic field
Rotation
phase-field simulation
Publisher
Taipei:National Taiwan University Dept Chem Engn
Type
journal article
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