Effects of dislocation reduction on AlGaN/GaN HEMTs using ELOG technology

AlGaN/GaN heterojunction has outstanding carrier transport property and high electron mobility because of the existence of two-dimensional electron gas with high concentration , and we can apply to high-power and high-frequency circuit operation. Currently , GaN is one of the most attractive semiconductor material. In this study, we primarily use ELOG technology to epitaxy high-quality GaN and fabricate AlGaN/GaN HEMTs with MOCVD. We confirm that ELOG technology really enhance the epitaxy quality by EPD wet etching method, and achieve different dislocation density on GaN by way of designing mask patterns . We find out the relationship between defect density and device performance by manufacturing HEMTs on different dislocation-density material. By using ELOG technology, we successfully reduce EPD from 1.05x107 cm-2 to 1.58x106 cm-2. At the same time , we enhance the maximum drain current （Id,max）from 380 mA/mm to 410 mA/mm, reduce on-resistance（Ron）from 12.7Ω mm to 6.18Ω