Efficiency improvement of InGaN LEDs at elevated temperature with dome-shaped patterned-sapphire substrates
Journal
2021 Conference on Lasers and Electro-Optics, CLEO 2021 - Proceedings
Date Issued
2021
Author(s)
Chen M.-H
Kuan C.-H
Su V.-C.
CHIEH-HSIUNG KUAN
Abstract
The efficiency of InGaN LEDs working at elevated temperatures has been improved by introducing patterned-sapphire substrates with dome-shaped nanostructures of the optimized height through the analysis of electroluminescence of devices using an integrating sphere. ? 2021 OSA.
Subjects
Domes
Efficiency
Gallium alloys
III-V semiconductors
Indium alloys
Light emitting diodes
Sapphire
Efficiency improvement
Elevated temperature
InGaN LED
Integrating spheres
Patterned sapphire substrate
Semiconductor alloys
Type
conference paper