SiGe nanoring formation
Journal
International Silicon-Germanium Technology and Device Meeting, ISTDM 2012
Pages
72-73
Date Issued
2012
Author(s)
Abstract
The SiGe quantum dots and nanorings are grown at 500°C by UHVCVD. TEM images show the grown quantum dots with epi-Si layer from SiH 4 /H 2 and SiH 4 /He, respectively. The epi-Si deposited by SiH 4 and H 2 cannot cap the quantum dots, but SiH 4 and He can form the Si cap.
Type
conference paper