Atomically Resolved Electronic States and Correlated Magnetic Order at Termination Engineered Complex Oxide Heterointerfaces
Journal
ACS Nano
Journal Volume
12
Journal Issue
2
Pages
1089-1095
Date Issued
2018-01
Author(s)
Bo-Chao Huang
Pu Yu
Chia-Seng Chang
Ramamoorthy Ramesh
Rafal E. Dunin-Borkowski
Philipp Ebert
Abstract
We map electronic states, band gaps, and interface-bound charges at termination-engineered BiFeO3/La0.7Sr0.3MnO3 interfaces using atomically resolved cross-sectional scanning tunneling microscopy. We identify a delicate interplay of different correlated physical effects and relate these to the ferroelectric and magnetic interface properties tuned by engineering the atomic layer stacking sequence at the interfaces. This study highlights the importance of a direct atomically resolved access to electronic interface states for understanding the intriguing interface properties in complex oxides. © 2018 American Chemical Society.
Subjects
atomically resolved electronic states; BiFeO3; complex oxide heterointerfaces; cross-sectional scanning tunneling microscopy; La0.7Sr0.3MnO3
Other Subjects
Electronic states; Energy gap; Lanthanum compounds; Manganese compounds; Scanning tunneling microscopy; Strontium compounds; BiFeO3; Cross-sectional scanning tunneling microscopies; Electronic interface; Hetero-interfaces; Interface property; La0.7Sr0.3MnO3; Magnetic interface properties; Physical effects; Interface states
Type
journal article