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College of Electrical Engineering and Computer Science / 電機資訊學院
Electrical Engineering / 電機工程學系
Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiN x films
Details
Comparing retention and recombination of electrically injected carriers in Si quantum dots embedded in Si-rich SiN x films
Journal
Applied Physics Letters
Journal Volume
99
Journal Issue
24
Date Issued
2011
Author(s)
Lin, C.-D.
Cheng, C.-H.
Lin, Y.-H.
Wu, C.-L.
Pai, Y.-H.
GONG-RU LIN
DOI
10.1063/1.3663530
URI
https://scholars.lib.ntu.edu.tw/handle/123456789/500268
URL
https://www.scopus.com/inward/record.uri?eid=2-s2.0-83755173238&doi=10.1063%2f1.3663530&partnerID=40&md5=d60c36d4895396d4c81531cb8aead8b1
Type
journal article