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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition
Details
Electroluminescence and Structure of n-ZnO/p-GaN Heterojunction LEDs Grown by Atomic Layer Deposition
Resource
IEEE Journal of Quantum Electronics, 46(2), 265-271
Journal
IEEE Journal of Quantum Electronics
Journal Volume
46
Journal Issue
2
Pages
265-271
Date Issued
2010
Date
2010
Author(s)
Chen, Hsing-Chao
Chen, Miin-Jang
Wu, Mong-Kai
Li, Wei-Chih
Tsai, Hung-Ling
Yang, Jer-Ren
Kuan, Hon
Shiojiri, Makoto
DOI
10.1109/JQE.2009.2025250
URI
http://ntur.lib.ntu.edu.tw//handle/246246/243931
SDGs
[SDGs]SDG7
Type
journal article
File(s)
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Name
376.pdf
Size
23.45 KB
Format
Adobe PDF
Checksum
(MD5):b8a367e71886ec4256ecdfcb853abf7e
