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  4. Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy
 
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Characterization of excitonic features in self-assembled InAs/GaAs quantum dot superlattice structures via surface photovoltage spectroscopy

Resource
Journal of Applied Physics 101 (10): 103102
Journal
Journal of Applied Physics.
Journal Volume
101
Journal Issue
10
Pages
103102
Date Issued
2007-05
Author(s)
Lee, C. H.
Huang, Y. S.
Wang, J. S.
Chan, C. H.
HAO-HSIUNG LIN  
DOI
10.1063/1.2733992
URI
https://www.scopus.com/inward/record.uri?eid=2-s2.0-34249910614&doi=10.1063%2f1.2733992&partnerID=40&md5=0292ae3aef01e274e9a1c4c5207781d1
Abstract
This work systematically investigates the influence of InAs growth conditions and superlattice parameters on the optical properties of InAs/GaAs quantum dot (QD) superlattice structures grown by molecular beam epitaxy. Using surface photovoltage spectroscopy, one directly obtains the absorption spectra up to the highest confined QD levels at room temperature. Based on photoluminescence measurements at different excitation wavelengths, a feature below the fundamental transition is attributed to the transition from uncoupled dots in the bottom layers. The QD transition energy shift was found to be correlated with material intermixing, driven by enhanced strain strength with the increase of layer number and the decrease of spacer thickness, and the growth rate of InAs. A blueshift observed in low growth rate samples is indicative of greatly enhanced intermixing. For QD superlattices grown at a relatively high deposition rate of InAs, the material intermixing effect is gradually enhanced with increasing layer numbers, which will compensate the electronically coupled effect and will prevent further energy shift toward the lower energy side. The absorption wavelengths in 10- and 30-period InAs/GaAs QD superlattices with higher growth rates are near 1.32 μm. The results suggest that these QD superlattice structures can be used as promising active media for long-wavelength QD lasers operating at room temperature. © 2007 American Institute of Physics.
SDGs

[SDGs]SDG7

Other Subjects
Excitons; Molecular beam epitaxy; Photovoltaic effects; Self assembly; Semiconducting gallium arsenide; Semiconductor quantum dots; Spectroscopic analysis; Surface measurement; Excitonic features; Material intermixing; Photoluminescence measurements; Surface photovoltage spectroscopy; Superlattices
Type
journal article
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