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College of Engineering / 工學院
Materials Science and Engineering / 材料科學與工程學系
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
Details
Ruthenium oxide metal nanocrystal capacitors with high-kappa dielectric tunneling barriers for nanoscale nonvolatile memory device applications
Resource
Microelectronic Engineering, 87(10), 1821-1827
Journal
Microelectronic Engineering
Journal Volume
87
Journal Issue
10
Pages
1821-1827
Date Issued
2010
Date
2010
Author(s)
Das, Atanu
Maikap, S.
Lin, C.-H.
Tzeng, P.-J.
Tien, T.-C.
Wang, T.-Y.
Chang, L.-B.
Yang, J.-R.
JER-REN YANG
DOI
10.1016/j.mee.2009.10.028
URI
http://ntur.lib.ntu.edu.tw//handle/246246/243845
Type
journal article
File(s)
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Name
289.pdf
Size
23.45 KB
Format
Adobe PDF
Checksum
(MD5):7f4218706879e964fd2d348acecd10b2
