High-Performance CsPb1−x Sn x Br3 Perovskite Quantum Dots for Light-Emitting Diodes
Journal
Angewandte Chemie International Edition
Date Issued
2017
Author(s)
Hung-Chia Wang
Weigao Wang
An-Cih Tang
Hsin-Yu Tsai
Zhen Bao
Toshiyuki Ihara
Naoki Yarita
Hirokazu Tahara
Yoshihiko Kanemitsu
Shuming Chen
Abstract
AbstractAll inorganic CsPbBr3 perovskite quantum dots (QDs) are potential emitters for electroluminescent displays. We have developed a facile hot‐injection method to partially replace the toxic Pb2+ with highly stable Sn4+. Meanwhile, the absolute photoluminescence quantum yield of CsPb1−xSnxBr3 increased from 45 % to 83 % with SnIV substitution. The transient absorption (TA) exciton dynamics in undoped CsPbBr3 and CsPb0.67Sn0.33Br3 QDs at various excitation fluences were determined by femtosecond transient absorption, time‐resolved photoluminescence, and single‐dot spectroscopy, providing clear evidence for the suppression of trion generation by Sn doping. These highly luminescent CsPb0.67Sn0.33Br3 QDs emit at 517 nm. A device based on these QDs exhibited a luminance of 12 500 cd m−2, a current efficiency of 11.63 cd A−1, an external quantum efficiency of 4.13 %, a power efficiency of 6.76 lm w−1, and a low turn‐on voltage of 3.6 V, which are the best values among reported tin‐based perovskite quantum‐dot LEDs.
SDGs
Publisher
Wiley-Blackwell
Type
journal article