p-type cuprous oxide thin films with high conductivity deposited by high power impulse magnetron sputtering
Journal
Ceramics International
Journal Volume
43
Journal Issue
8
Pages
6214-6220
Date Issued
2017
Author(s)
Sun, H.
Chen, S.-C.
Wen, C.-K.
Chuang, T.-H.
Arab Pour Yazdi, M.
Sanchette, F.
Billard, A.
Abstract
CuxO thin films were deposited on glass and silicon substrates by High Power Impulse Magnetron Sputtering (HiPIMS) at room temperature from a metallic copper target. The influence of pulse off-time on the films’ structural, morphological and optoelectronic properties was investigated. It was found that the power intensity applied on the Cu target was strongly affected by pulse off-time, which had an important impact on the films’ composition. Upon increasing the pulse off-time from 500 μs to 3500 μs (pulse on-time fixed at 50 μs), the films’ crystallinity as well as transmittance in the visible region both ameliorate. Meanwhile, the conductivity type changed from n-type to p-type as the films’ composition changed. When the pulse off-time was fixed at 2000 μs, the optimal p-type conductivity of about 3 S × cm−1 was achieved, which is the highest p-type conductivity reported for Cu2O films in the last few years. The transition of the films’ conductivity type can be utilized for the fabrication of Cu2O-based p-n homojunction, and may also prove useful in developing other oxide films by using HiPIMS technology.
SDGs
Type
journal article