Fabrication and Characterization of Electroluminescent Metal-Oxide-Semiconductor Silicon Tunneling Diodes
Date Issued
2006
Date
2006
Author(s)
Liang, Eih-Zhe
DOI
en-US
Abstract
The fabrication and characterization of the electroluminescent metal-oxide-semiconductor tunneling diodes (MOS-TD) based on silicon are presented in this dissertation. A special case of MOS-TDs, which uses SiO2 nanoparticles as the oxide layer, is studied. The use of SiO2 nanoparticles results in carrier confinement and enhances light emission. In MOSTDs, the light-current relation, and the frequency response lifetime are found to vary with the injection current density. A carrier dynamic model based on characteristics of MOS-TDs is developed to explain the current-voltage relation, the light-current relation, and the small signal frequency response. The theoretical internal efficiency is estimated to be several tens of percents. A nanostructured MOS-TDs using SiO2 nanoparticles is fabricated to improve the carrier confinement and shows a 30% more light emission efficiency. An optical gain model in MOS-TDs is developed based on the carrier dynamic model. The criterion of population inversion and the optical gain coefficients in Si are derived. The optical gain coefficients are calculated at different voltages and currents in MOS-TDs, whose magnitudes are about 1 cm-1 at the silicon bandgap energy. For stimulated emission to occur in an electrically pumped Si waveguide, which uses the MOS-TD as the active region, the scattering loss has to be less than 1 cm-1. This corresponds to a root-mean-square (RMS) roughness of less than 1 nm at the waveguide sidewalls. A laser reformation technique capable of reducing the RMS roughness to 0.239nm is developed.
Subjects
矽
發光二極體
Silicon
Light emitting diode
Type
thesis
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