Room-Temperature Electroluminescence from Metal-Oxide-Silicon-Tunneling Diodes on (110) Substrates
Journal
Japanese journal of applied physics
Journal Volume
39
Journal Issue
10 B
Pages
L1016-L1018
Date Issued
2000
Date
2000
Author(s)
Abstract
We report the band-edge electroluminescence at room temperature from metal-oxide-silicon tunneling diodes on (110) substrates. An electron-hole plasma recombination model can be used to fit the emission line shape. The reliability of this electroluminescence is studied and the emission intensity varies within 10% during a 2.5 × 104 C/cm2 stress. A comprehensive illustration composed of localized holes, phonons, and interface roughness is given to describe the radiative process. The picture can be used to explain the enhanced electroluminescence intensity, as compared to photoluminescence, and can be used to understand the substrate orientation effect on electroluminescence intensity.
Other Subjects
Electroluminescence; Electrons; Infrared radiation; Interfaces (materials); Mathematical models; MOS devices; Phonons; Photoluminescence; Substrates; Surface roughness; Temperature; Band edge emission; Electron hole plasma recombination model; Interface roughness; Tunnel diodes
Type
journal article
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