The Roughness-Enhanced Light Emission from Metal-Oxide-Silicon Light-Emitting Diodes Using Very High Vacuum Prebake
Resource
Japanese Journal of Applied Physics 41 (3B): L326-L328
Journal
Japanese Journal of Applied Physics
Journal Volume
41
Journal Issue
3 B
Pages
L326-L328
Date Issued
2002
Date
2002
Author(s)
Abstract
The oxide roughness of metal-oxide-silicon diodes can be intentionally controlled by the very high vacuum pre-bake and the growth conditions during rapid thermal oxidation. Both surface and Si/oxide interface have the similar magnitude of roughness measured by atomic force microscopy, indicating the conformal growth of oxide. At accumulation bias (positive gate bias), the holes tunnel from gate electrode to n-type Si through the ultrathin oxide, and recombine with the electrons in the accumulation region radiatively if phonon scattering and roughness scattering provide the necessary momentum. The light emission intensity increases with increasing oxide roughness. Strong electroluminescence with an external quantum efficiency of ∼ 2×10-6 at room temperature was observed from a rough metal-oxide-silicon tunneling diode.
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Type
journal article
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