Atomic-scale observation of spontaneous hole doping and concomitant lattice instabilities in strained nickelate films
Journal
New Journal of Physics
Journal Volume
24
Journal Issue
2
Date Issued
2022
Author(s)
Abstract
Thin oxide films are of vast opportunities for modern electronics and can facilitate emergent phenomena by factors absent in the bulk counterparts, such as the ubiquitous epitaxial strain and interfacial charge doping. Here, we demonstrate the twisting of intended bulk-metallic phases in 10-unit-cell LaNiO3, PrNiO3, and NdNiO3 films on (001)-oriented SrTiO3 into distinct charge-lattice entangled states by epitaxial strains. Using atomically-resolved electron microscopy and spectroscopy, the interfacial electron doping into SrTiO3 in the conventional context of band alignments are discounted. Instead, spontaneously doped holes that are localized and at the order of 1013 cm-2 are atomically unraveled across all three heterointerfaces and associated with strain mitigations by the accompanied atomic intermixing with various ionic radii. The epitaxial strains also lead to condensations of monoclinic-C2/c lattice instabilities, which are hidden to the bulk phase diagram. The group-theoretical analysis of characteristic transition pathways unveils the strain resurrection of the hidden C2/c symmetry. While this strain-induced monoclinic phase in LaNiO3 remains metallic at room temperature, those in PrNiO3 and NdNiO3 turn out to be insulating. Such strain-induced monoclinic lattice instabilities and parasitic localized holes go beyond the classical elastic deformations of films upon epitaxial strains and hint on plausible hidden orders in versatile oxide heterostructures with unexpected properties, of which the exploration is only at the infancy and full of potentials. ? 2022 The Author(s). Published by IOP Publishing Ltd on behalf of the Institute of Physics and Deutsche Physikalische Gesellschaft.
Subjects
charge doping; electron energy-loss spectroscopy; epitaxial strains; nickel oxides; scanning transmission electron microscopy; Electron energy levels; Electron energy loss spectroscopy; Electron scattering; Electrons; Energy dissipation; Group theory; High resolution transmission electron microscopy; Lanthanum compounds; Oxide films; Praseodymium compounds; Quantum entanglement; Scanning electron microscopy; Semiconductor doping; Strain; Strontium titanates; Titanium compounds; Atomic scale; Charge doping; Emergent phenomenon; Epitaxial strain; Hole-doping; Lattice instability; Nickelates; Scanning transmission electron microscopy; Strain induced; Thin oxide films; Nickel oxide
Other Subjects
Electron energy levels; Electron energy loss spectroscopy; Electron scattering; Electrons; Energy dissipation; Group theory; High resolution transmission electron microscopy; Lanthanum compounds; Oxide films; Praseodymium compounds; Quantum entanglement; Scanning electron microscopy; Semiconductor doping; Strain; Strontium titanates; Titanium compounds; Atomic scale; Charge doping; Emergent phenomenon; Epitaxial strain; Hole-doping; Lattice instability; Nickelates; Scanning transmission electron microscopy; Strain induced; Thin oxide films; Nickel oxide
Type
journal article