Growth of the Bi2Se3 Surface Oxide for Metal-Semiconductor-Metal Device Applications
Journal
Journal of Physical Chemistry C
Journal Volume
120
Journal Issue
6
Pages
3314-3318
Date Issued
2016
Author(s)
Abstract
The effect of the surface structure of Bi2Se3 on its interior properties has been well studied recently, but the interfacial structure and electrical properties of the oxidized Bi2Se3 surface are little known. In contrast to the self-limited formation of native oxide on Bi2Se3, the degree of oxidation on the Bi2Se3 surface in oxygen plasma is enhanced. Results of transmission electron microscopy and X-ray photoelectron spectroscopy show that the surface of the oxidized Bi2Se3 is composed of a layer of amorphous bismuth oxide (BiOx), and the thickness of the BiOx layer can be controlled by the length of the plasma process. Electrical measurements of this structure present the Schottky-type transport property at the interface between the oxidized layer and the bulk Bi2Se3 crystal, and the turn-on voltage depends on the thickness of the surface BiOx layer. This study of the structure, formation mechanism, and electrical properties of the surface oxide of Bi2Se3 formed in oxygen plasma provides useful information for future development of electronic devices based on bismuth chalcogenides.
Publisher
American Chemical Society
Type
journal article