Substrate-dependent growth of HoMnO3 films
Journal
Japanese Journal of Applied Physics
Journal Volume
49
Journal Issue
4 PART 1
Pages
0415011-0415013
Date Issued
2010
Author(s)
Abstract
Manganites with small rare earths (RE = Ho, Er, Tm, Yb, Lu, or Y) and hexagonal structures belong to a class of materials known as hexagonal ferroelectrics, in contrast to those with large rare earths and orthorhombic, perovskite-related structures showing different physical properties. In this work, we study the effects of growth conditions on the stabilization of HoMnO 3 films with both hexagonal and orthorhombic structures. Based on our experimental results, a HoMnO 3 film with a hexagonal structure can be stabilized on Si(111) at 850 °C and above. Pure orthorhombic phases grow on SrTiO 3 (100), SrTiO 3 (110), LaAlO 3 (100), and LaAlO 3 (110) in a temperature range from 750 to 850 °C. Multiphase samples can be grown on MgO(100) at all temperatures.
Type
journal article